IRLR024NTRPBF Просмотр технического описания (PDF) - Unspecified
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IRLR024NTRPBF Datasheet PDF : 8 Pages
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IRLR024NTRPBF
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.7
TJ = 150 °C
2.4
10
2.1
www.VBsemi.tw
ID = 250 μA
1.8
1
TJ = 25 °C
1.5
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1250
1000
Ciss
750
1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
127
ID = 250 μA
122
117
500
112
250
Coss
0 Crss
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
2.25
1.8
VGS = 10 V, ID = 6.6 A
1.35
VGS = 4.5 V, ID = 6 A
107
102
- 50 - 25 0
25 50 75 100 125 150
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
20
15
10
0.9
5
0.45
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating
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