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IR3871MPBF Просмотр технического описания (PDF) - International Rectifier

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IR3871MPBF Datasheet PDF : 21 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
LAYOUT RECOMMENDATION
Bypass Capacitor:
One 1µF high quality ceramic capacitor should be
placed as near VCC pin as possible. The other
end of capacitor can be connected to a via or
connected directly to GND plane. Use a GND
plane instead of a thin trace to the GND pin
because a thin trace have too much impedance.
Boot Circuit:
CBOOT should be placed near the BOOT and
PHASE pins to reduce the impedance when the
upper MOSFET turns on.
Power Stage:
Figure 24 shows the current paths and their
directions for the on and off periods. The on time
path has low average DC current and high AC
current. Therefore, it is recommended to place the
input ceramic capacitor, upper, and lower
MOSFET in a tight loop as shown in Figure 24.
The purpose of the tight loop from the input
ceramic capacitor is to suppress the high
frequency (10MHz range) switching noise and
reduce Electromagnetic Interference (EMI). If this
path has high inductance, the circuit will cause
voltage spikes and ringing, and increase the
switching loss. The off time path has low AC and
high average DC current. Therefore, it should be
laid out with a tight loop and wide trace at both
ends of the inductor. Lowering the loop resistance
reduces the power loss. The typical resistance
value of 1-ounce copper thickness is 0.5per
square inch.
IR3871MPBF
VIN
ON
Q1
VOUT
IR3871
OFF
CIN
Q2
COUT
Figure 24. Current Path of Power Stage
17

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