IRLL014 Просмотр технического описания (PDF) - Vishay Semiconductors
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IRLL014 Datasheet PDF : 9 Pages
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IRLL014, SiHLL014
Vishay Siliconix
700
VGS = 0 V, f = 1 MHz
600
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
500
400
300
200
Ciss
Coss
100
0
100
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
TJ = 25 °C
100
TJ = 150 °C
VGS = 0 V
10-1
0.4
0.8
1.2
1.6
2.0
2.4
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10 ID = 10 A
6
VDS = 48 V
6
VDS = 30 V
4
2
For test circuit
see figure 13
0
0
2
4
6
8
10
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
103
5
2
102
Operation in this area limited by RDS(on)
5
2
10
5
2
1
5
2
0.1
0.1 2
100 µs
1 ms
51
TC = 25 °C
TJ = 150 °C
Single Pulse
2
5 10 2
10 ms
5 102 2
5 103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91319
S10-1257-Rev. C, 31-May-10
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