ISL3170EIUZ-T7A Просмотр технического описания (PDF) - Renesas Electronics
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производитель
ISL3170EIUZ-T7A
Renesas Electronics
ISL3170EIUZ-T7A Datasheet PDF : 21 Pages
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ISL3170E, ISL3171E, ISL3172E, ISL3173E, ISL3174E, ISL3175E, ISL3176E, ISL3177E, ISL3178E
Typical Performance Curves VCC = 3.3V, TA = +25°C, unless otherwise specified (Continued)
DI
5
RO
0
RDIFF = 54Ω, CD = 50pF
5
0
DI
5
0
RDIFF = 54Ω, CD = 50pF
5
0
RO
3.0
2.5 B/Z
2.0
1.5
1.0
A/Y
0.5
0
TIME (200ns/DIV)
FIGURE 22. DRIVER AND RECEIVER WAVEFORMS,
LOW TO HIGH (ISL3173E, ISL3174E, ISL3175E)
3
2.5 A/Y
2
1.5
1
B/Z
0.5
0
TIME (200ns/DIV)
FIGURE 23. DRIVER AND RECEIVER WAVEFORMS,
HIGH TO LOW (ISL3173E, ISL3174E, ISL3175E)
DI
5
0
RDIFF = 54Ω, CD = 50pF
5
0
RO
3.0
2.5 B/Z
2.0
1.5
1.0
A/Y
0.5
0
TIME (10ns/DIV)
FIGURE 24. DRIVER AND RECEIVER WAVEFORMS,
LOW TO HIGH (ISL3176E, ISL3177E, ISL3178E)
35
30
VOL, +25°C
25
20 VOH, +25°C
VOL, +85°C
15
VOH, +85°C
10
5
0
0
0.5
1.0 1.5
2.0
2.5
3.0
3.5
RECEIVER OUTPUT VOLTAGE (V)
FIGURE 26. RECEIVER OUTPUT CURRENT vs RECEIVER
OUTPUT VOLTAGE
FN6307 Rev.6.00
Aug 31, 2017
DI
5
0
RDIFF = 54Ω, CD = 50pF
5
0
RO
3.0
2.5 A/Y
2.0
1.5
1.0
B/Z
0.5
0
TIME (10ns/DIV)
FIGURE 25. DRIVER AND RECEIVER WAVEFORMS,
HIGH TO LOW (ISL3176E, ISL3177E, ISL3178E)
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
535
PROCESS:
Si Gate BiCMOS
Page 16 of 21
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