IRFU13N15D Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.
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IRFU13N15D Datasheet PDF : 8 Pages
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IRFR/U13N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
150
–––
–––
3.0
–––
–––
–––
–––
–––
0.17
–––
–––
–––
–––
–––
–––
–––
–––
0.18
5.5
25
250
100
-100
V
V/°C
Ω
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 8.3A
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
5.0 ––– –––
––– 19 29
––– 5.5 8.2
––– 9.4 14
––– 8.0 –––
––– 26 –––
––– 12 –––
––– 11 –––
––– 620 –––
––– 130 –––
––– 38 –––
––– 780 –––
––– 62 –––
––– 110 –––
S VDS = 50V, ID = 8.3A
ID = 8.3A
nC VDS = 120V
VGS = 10V,
VDD = 75V
ns ID = 8.3A
RG = 11Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Typ.
–––
–––
–––
Max.
130
8.3
8.6
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
–––
1.75
–––
50
°C/W
–––
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
MOSFET symbol
D
––– ––– 14
A showing the
integral reverse
G
––– ––– 56
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C, IS = 8.3A, VGS = 0V
––– 110 ––– ns TJ = 25°C, IF = 8.3A
––– 520 ––– nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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