ST30100C Просмотр технического описания (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd
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ST30100C Datasheet PDF : 7 Pages
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SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1047, Rev. A
ST30100C
STB30100C
STF30100C
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg)*
Reverse Current (per leg)*
Junction Capacitance
(per leg)
Voltage Rate of Change
* Pulse Width < 300µs, Duty Cycle <2%
Symbol
VF1
VF2
IR1
IR2
CT
dv/dt
Condition
@ 15A, Pulse, TJ = 25 °C
@ 15A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
-
Typ.
0.70
0.67
0.023
Max.
0.75
0.70
0.5
Units
V
V
mA
3.19
55
mA
686
800
pF
-
10,000 V/µs
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to
Case(per leg)*
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
wt
ST30100C
STB30100C
-55 to +150
-55 to +150
STF30100C
2.5
2.5
5.5
2.0
1.85
2.0
TO-220AB/ D2PAK / ITO-220AB
Units
°C
°C
°C/W
g
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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