MUBW30-06A7 Просмотр технического описания (PDF) - IXYS CORPORATION
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производитель
MUBW30-06A7 Datasheet PDF : 8 Pages
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MUBW 30-06 A7
Output Inverter T1 - T6
Symbol
VCES
VGES
VGEM
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continuous
Transient
600
V
± 20
V
± 30
V
TC = 25°C
TC = 80°C
50
A
35
A
VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 60
A
VCEK ≤ VCES
VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C
non-repetitive
10
µs
TC = 25°C
180
W
Symbol
VCE(sat)
VGE(th)
I
CES
IGES
td(on)
tr
td(off)
tf
Eon
E
off
Cies
QGon
RthJC
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 0.7 mA; VGE = VCE
V
CE
=
V;
CES
V
GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 30 A
VGE = ±15 V; RG = 33 Ω
1.9 2.3 V
2.2
V
4.5
6.5 V
0.6 mA
0.4
mA
200 nA
50
ns
50
ns
270
ns
40
ns
1.4
mJ
1.0
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300V; VGE = 15 V; IC = 30 A
(per IGBT)
1600
94
pF
nC
0.7 K/W
Output Inverter D1 - D6
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
72
A
45
A
Symbol
V
F
IRM
t
rr
RthJC
Conditions
I
F
=
30
A;
V
GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C
V = 300 V; V = 0 V
R
GE
(per diode)
Characteristic Values
min. typ. max.
1.6 V
1.2
V
25
A
90
ns
1.19 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
V0 = 1.19 V; R0 = 9 mΩ
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 42 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 0.89 V; R0 = 8 mΩ
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.99 V; R0 = 81 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.07 V; R0 = 23 mΩ
Thermal Response
D11 - D16
Rectifier Diode (typ.)
Cth1 = 0.106 J/K; Rth1 = 1.06 K/W
Cth2 = 0.79 J/K; Rth2 = 0.239 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
Cth1 = 0.156 J/K; Rth1 = 0.545 K/W
Cth2 = 1.164 J/K; Rth2 = 0.155 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.116 J/K; Rth1 = 0.973 K/W
Cth2 = 0.88 J/K; Rth2 = 0.217 K/W
T7 / D7
IGBT (typ.)
Cth1 = 0.077 J/K; Rth1 = 1.111 K/W
Cth2 = 0.732 J/K; Rth2 = 0.279 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.043 J/K; Rth1 = 2.738 K/W
Cth2 = 0.54 J/K; Rth2 = 0.462 K/W
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