AH11 Просмотр технического описания (PDF) - TriQuint Semiconductor

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AH11

High Dynamic Range Dual Amplifier

TriQuint Semiconductor 

AH11

High Dynamic Range Dual Amplifier

Specifications

Absolute Maximum Ratings

Parameter

Rating

Storage Temperature

-55 to +125 C

RF Input Power, CW, 50Ω,T = 25ºC

4 dB above Input

P1dB

Supply Voltage

+6 V

Operation of this device outside the parameter ranges given

above may cause permanent damage.

Recommended Operating Conditions

Parameter

Vdd

Tch (for >106 hours MTTF)

Operating Temp. Range

Min

-40

Typ

+5

Max

+160

+85

Units

V

oC

oC

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications (Single-Ended Configuration)

Test conditions unless otherwise noted: T = 25 ºC, Supply Voltage = +5 V, Frequency = 800 MHz, 50  System, tested on each single-

ended amplifier (there are two amplifiers in an AH11 package)

Parameter

Operational Frequency Range

Test Frequency

Gain

Input Return Loss

Output Return Loss

Output P1dB

Output IP3

Noise Figure

Supply Voltage (Vdd)

Operating Current (Idd)

Thermal Resistance (jnc. to case)

Conditions

See Note 1.

See Note 2.

Min

150

12.4

+37

120

Typical

800

13.5

-8

-15

+21

+41

2.7

5

150

Max

3000

180

29

Units

MHz

MHz

dB

dB

dB

dBm

dBm

dB

V

mA

C/W

Notes:

1. S21 and S11 can be improved in the band of interest with some slight input tuning.

2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression of the largest IM3 product

is used to calculate the OIP3 using a 2:1 rule. Slight OIP3 degradation of about 2 dB is expected to occur at lower temperatures (from

25 ºC to –40 ºC).

Data Sheet: Rev A 0 6/23/11

© 2011 TriQuint Semiconductor, Inc.

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Disclaimer: Subject to change without notice

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