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KBP2005G Просмотр технического описания (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

Номер в каталоге
Компоненты Описание
производитель
KBP2005G
SMC
Sangdest Microelectronic (Nanjing) Co., Ltd SMC
KBP2005G Datasheet PDF : 4 Pages
1 2 3 4
Technical Data
Data Sheet N1746, Rev. -
KBP2005G
THRU
KBP210G
Green Products
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Type number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
@ TA=50
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
Method)
Forward Voltage per element @IF=2.0A
Peak Reverse Current @TA=25
At Rated DC Blocking Voltage @TA=125
Typical Thermal Resistance (Note 2)
Junction Temperature
Storage Temperature Range
Symbol
KBP
2005G
KBP
201G
KBP
202G
KBP
204G
KBP
206G
KBP KBP
208G 210G
Units
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
Io
2.0
A
IFSM
VF
IR
RθJA
RθJL
TJ
TSTG
60
1.1
5.0
500
25
8
-55 to +150
-55 to +150
A
V
µA
°C/W
°C
°C
Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

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