2N6251 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2N6251

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCER

Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 50Ω

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.67A

VBE(sat) Base-Emitter Saturation Voltage

ICEV

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= 10A; IB= 1.67A

VCE= Rated VCEV; VBE= -1.5V

VCE= Rated VCEV; VBE= -1.5V;TC=125℃

VCE= 300V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

hFE

DC Current Gain

IC= 10A ; VCE= 3V

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 30V,t= 1.0s,Nonrepetitive

fT

Current Gain-Bandwidth Product

IC= 1A ; VCE= 10V; ftest= 1.0MHz

Switching Times

tr

Rise Time

tstg

Storage Time

IC= 10A , VCC= 200V, IB1= -IB2= 1.67A

tf

Fall Time

2N6251

MIN MAX UNIT

350

V

375

V

1.5

V

2.25 V

5.0

10

mA

5.0 mA

1.0 mA

6

50

5.8

A

2.5

MHz

2.0 μs

3.5 μs

1.0 μs

SPTECH website：www.superic-tech.com

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