TSHA6200(1999) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

TSHA6200
(Rev.:1999)

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4
) Package

Vishay Semiconductors 

TSHA620.

Vishay Telefunken

Basic Characteristics

Tamb = 25_C

Parameter

Forward Voltage

Temp. Coefficient of VF

Reverse Current

Junction Capacitance

Temp. Coefficient of fe

Angle of Half Intensity

Peak Wavelength

Spectral Bandwidth

Temp. Coefficient of lp

Rise Time

Fall Time

Test Conditions

IF = 100 mA, tp = 20 ms

IF = 100mA

VR = 5 V

VR = 0 V, f = 1 MHz, E = 0

IF = 20 mA

IF = 100 mA

IF = 100 mA

IF = 100 mA

IF = 100 mA

IF = 1.5 A

IF = 100 mA

IF = 1.5 A

Symbol Min

VF

TKVF

IR

Cj

TKfe

ϕ

lp

Dl

TKlp

tr

tr

tf

tf

Typ

Max Unit

1.5

1.8

V

–1.6

mV/K

100 mA

20

pF

–0.7

%/K

±12

deg

875

nm

80

nm

0.2

nm/K

600

ns

300

ns

600

ns

300

ns

Type Dedicated Characteristics

Tamb = 25_C

Parameter

Forward Voltage

Radiant Intensity

Radiant Power

Test Conditions

Type

Symbol Min Typ Max Unit

IF=1.5A, tp=100ms TSHA6200/6201 VF

3.2 4.9

V

TSHA6202/6203 VF

3.2 4.5

V

IF=100mA,

tp=20ms

TSHA6200

TSHA6201

Ie

25

40

Ie

30

50

mW/sr

mW/sr

TSHA6202

Ie

36

60

mW/sr

IF=1.5A, tp=100ms

TSHA6203

TSHA6200

Ie

50

65

Ie

300 500

mW/sr

mW/sr

TSHA6201

Ie

400 600

mW/sr

TSHA6202

Ie

500 700

mW/sr

IF=100mA,

tp=20ms

TSHA6203

TSHA6200

TSHA6201

TSHA6202

TSHA6203

Ie

600 800

fe

22

fe

23

fe

24

fe

25

mW/sr

mW

mW

mW

mW

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2 (6)

Document Number 81021

Rev. 2, 20-May-99

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