MMBT3904TT1 Просмотр технического описания (PDF) - Willas Electronic Corp.
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MMBT3904TT1 Datasheet PDF : 7 Pages
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WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSeURnFAeCrEaMlOPUuNTrSpCoHOsTeTKTY BrAaRnRsIERisRtEoCTrIsFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
Features
• B5a00tch process design, excellent power dissipation offers
•
better rev
L3o0w0 profil
e
e
rse lea
surfac
kage curre
e mounted
nt and
applic
therm
ation i
a
n
Il
r
C
e/I
sB =is1t0a
n
order to
c
e
.
o2p0t0imize board space.
• Low power loss, high efficiency.
100
•
•
Hi7g0h
Hi5g0h
current capability,
surge capability.
low
forward
voltage
t r@ V
drop.
CC = 3.0
V
• Guardring for overvoltage protection.
• Ul3t0ra high-speed switching.
40 V
20
• Silicon epitaxial planar chip, metal silicon junction.
• Le1a0 d-free parts meet environmental standards 1o5f V
•
MIL7 -STD-19500 /228
RoH5 S product for packing
cotdde@sVufOfBix=
"0GV"
2.0 V
Halo1g.e0 n free2.0pro3.d0uc5t .f0or7.p0a10cking co20de 3s0uff5ix0 "H70" 100 200
MechanicIaC ,lCdOaLLtEaCTOR CURRENT (mA)
• Epoxy : UL94-V0Friagtuerdefl5a.mTeurrent–aOrdnanTtime
Package outline
500
300
200
100
70
50
30
20
10
7
5
1.0
SOD-123H V CC = 40 V
I C /I B = 10
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I C , COLLECTOR CURRENT (mA)
Figure 6. Rise Time
0.040(1.0)
0.024(0.6)
• C5a0s0e : Molded plastic, SOD-123H
, 500
• Terminals :Plated terminals, solderable pt e’sr= Mt sI–L1-/S8 tTf D-750
300
200
I C /I B =2M0 ethIoCd/I 2B =01206
I B1 = I B2
300
200
• Polarity : Indicated by cathode band
100
100
• Mo7u0 nting Position : Any
70
• We50ight : Approximated 0.011 gram I C /I B =20
50
0.031(0.8) Typ.
0.031(0.8) Typ.
V CC = 40 V
I B1 = I B2
DimensionsI Cin/IiBn=ch2e0s and (millimeters)
30
20
MAXIMUM
RATINGS
AND
I C /I B =10
ELECTRICAL
CHAR32A00 CTERISTICISC/I
B
=
10
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phas1e70 half wave, 60Hz, resistive of inductive load.
10
7
For capacitiv5e load, derate current by 20%
5
1.0
2.0 3.0 5.0 7.0 10
RATINGS
20 30 50 70 100 200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
I C , COLLECTOR CURRENT (mA) 12
13
14 I C , C1O5 LLECT1O6R CURR1E8NT (mA)10
115 120
Maximum Recurrent Peak RevFerisgeuVroelt7ag. eStorage TimVeRRM
20
30
40
50Figure680. Fall Ti8m0e 100
150
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified CurreTntYPICAL AIUO DIO SMALL–SIGNAL CHARACTERIS1T.0ICS
NOISE FIGURE VARIATIONS
Peak Forward
superimposed
Surge Current 8.3 ms single half
on rated load (JEDEC method)
sine-wave
(V
CEIF=SM5.0
Vdc,
T
A
=
25°C,
Bandwidth
=
1.0
Hz)
30
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Tem12perature Range
SOURCE RESISTANCE=200Ω
Storage
Temperature
10
RIaCn=g1e.0
mA
RΘJA
CJ
TJ
TSTG
-55 to +11245
12
f = 1.0 kHz
40
120
I C = 1.0-m6A5 to +175
-55 to +150
Maximum
8
Forward
CHARACTESROUISRTCIECSRESISTANCE
Voltage at 1.I0CA= D0.C5 mA
=20S0ΩYMBOL
VF
FM120-MH
FM130-MH10FM140-MH
0.850
FIMC =1500.5-MmHAFM160-MH
0.70
FM180-MH FM1100-MH FM1150-MH
0.85 I C = 50 µA 0.9
FM1200-MH
0.92
Maximum Aver6age Reverse Current at S@OTUAR=C2E5R℃ESISTANCIRE =1.0k
Rated DC Blocking Voltage
I@C =T5A0=µ1A25℃
6
4
4
NOTES:
0.5
I C = 100 µA
10
1- Measured at 12 MHSZOaUnRdCaEppRlEieSdISreTvAeNrCseE=v5o0lt0aΩge of 4.0 VDC.
2
2- Thermal ResistancIeC F=r1o0m0 µJuAnction to Ambient
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20 40
100
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20 40
100
f, FREQUENCY (kHz)
Figure 9.
R S , SOURCE RESISTANCE (kΩ)
Figure 10.
2012-112012-06
WILLASWEILLLEACSTRELOENCICTRCOONRICP.COR
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