AS29F010F-120/883C Просмотр технического описания (PDF) - Micross Components
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AS29F010F-120/883C Datasheet PDF : 26 Pages
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FLASH
AS29F010
AC CHARACTERISTICS: Erase and Program Operations
PARAMETER
Write Cycle Time1
SYMBOL
JEDEC Std -50
MIN tAVAV tWC 50
Address Setup Time
MIN tAVEL tAS
Address Hold Time
MIN tELAX tAH
40
Data Setup Time
MIN tDVEH tDS
25
Data Hold Time
Output Enable Setup Time1
MIN tEHDX
MIN
tDH
tOES
Read Recover Time Before Write MIN tGHEL tGHEL
WE\ Setup Time
MIN tWLEL tWS
WE\ Hold Time
MIN tEHWH tWH
CE\ Pulse Width
MIN tELEH tCP
25
CE\ Pulse Width High
Byte Programming Operation2
Chip/Sector Erase Operation2
MIN tEHEL tCPH
MIN tWHWH1 tWHWH1
MAX tWHWH2 tWHWH2
NOTES:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
SPEED OPTIONS
-60 -70 90 -120 -150 UNITS
60 70 90 120 150 ns
0
ns
45 45 45 50 50 ns
30 30 45 50 50 ns
0
ns
0
ns
0
ns
0
ns
0
ns
30 35 45 50 50 ns
20
ns
14
μs
15
sec
FIGURE 13: AC CHARACTERISTICS, Alternate CE\ Controlled
Write Operation Timings
NOTES:
1. PA = program address, PD = program data, SA = sector address, DQ7\ = complement of data input, DOUT = array data.
2. Figure indicates the last two bus cycles of the command sequence.
AS29F010
Rev. 2.6 11/10
18
Micross Components reserves the right to change products or specifications without notice.
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