IRFD9220PBF Просмотр технического описания (PDF) - Vishay Semiconductors
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IRFD9220PBF Datasheet PDF : 9 Pages
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www.vishay.com
IRFD9220, SiHFD9220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 200
VGS = - 10 V
1.5
Qg (Max.) (nC)
15
Qgs (nC)
3.2
Qgd (nC)
8.4
Configuration
Single
S
HVMDIP
G
S
G
D
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
Available
RoHS*
COMPLIANT
• P-Channel
• Fast Switching
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD9220PbF
SiHFD9220-E3
IRFD9220
SiHFD9220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at - 10 V
TA = 25 °C
TA = 100 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 17.8 mH, Rg = 25 , IAS = - 3 A (see fig. 12).
c. ISD - 3.9 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
LIMIT
- 200
± 20
- 0.56
- 0.36
- 4.5
0.0083
80
- 0.56
0.10
1.0
- 5.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S12-0617-Rev. D, 26-Mar-12
1
Document Number: 91141
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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