14N06L Просмотр технического описания (PDF) - Harris Semiconductor
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14N06L
Harris Semiconductor
14N06L Datasheet PDF : 11 Pages
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SEMICONDUCTOR
July 1996
RFD14N06L, RFD14N06LSM,
RFP14N06L
14A, 60V, Avalanche Rated, Logic Level
N-Channel Enhancement-Mode Power MOSFETs
Features
Packaging
• 14A, 60V
• rDS(ON) = 0.100Ω
• Temperature Compensating PSPICE Model
JEDEC TO-220AB
SOURCE
DRAIN
GATE
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
The RFD14N06L, RFD14N06LSM, and RFP14N06L are
N-channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching
regulators, switching converters, motor drivers and relay driv-
ers. This performance is accomplished through a special gate
oxide design which provides full rated conductance at gate
bias in the 3V - 5V range, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFD14N06L
TO-251AA
14N06L
RFD14N06LSM
TO-252AA
14N06L
RFP14N06L
TO-220AB
FP14N06L
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, i.e.
RFD14N06LSM9A.
Formerly developmental type TA09870.
DRAIN (FLANGE)
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Symbol
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
D
G
S
Absolute Maximum Ratings TC = +25oC
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Soldering Temperature of Leads for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
RFD14N06L, RFD14N06LSM,
RFP14N06L
60
60
± 10
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to +175
260
UNITS
V
V
V
A
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1996
1
File Number 4088.1
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