2SC3936G Просмотр технического описания (PDF) - Panasonic Corporation
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2SC3936G Datasheet PDF : 5 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3936G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
/ • Optimum for RF amplification, oscillation, mixing, and IF of
FM/AM radios
• S-Mini type package, allowing downsizing of the equipment
e e. and automatic insertion through the tape packing
nc d cle stag ■ Absolute Maximum Ratings Ta = 25°C
a e lifecy Parameter
Symbol Rating
Unit
t Collector-base voltage (Emitter open) VCBO
30
V
uc Collector-emitter voltage (Base open) VCEO
20
V
n u rod Emitter-base voltage (Collector open) VEBO
5
V
te tin r P Collectorcurrent
IC
30
mA
fou . Collector power dissipation
PC
150
mW
ing type tion Junction temperature
Tj
150
°C
a Storage temperature
Tstg −55 to +150 °C
■ Package
• Code
SMini3-F2
• Marking Symbol: K
• Pin Name
1. Base
2. Emitter
3. Collector
ain onludes faoilnlotewnanncceetyupeed typpeed test infoo.rjpm/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C
c inc d m tena ntin d ty t la ic.c Parameter
Symbol
Conditions
Min Typ Max Unit
ed ne in co ue ou on Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
M is tinu pla ma dis tin ab as Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20
V
iscon laned iscon URL .pan Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
n Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
250
/D p d ing ico Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230
MHz
D nce llow em Reverse transfer capacitance
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.3
pF
a fo .s (Common emitter)
ten isit ww Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
ain e v ://w 2. *: Rank classification
M as ttp Rank
B
C
Ple h hFE
70 to 160 110 to 250
Publication date: April 2007
SJC00362AED
1
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