PBSS4140T Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

PBSS4140T

Silicon NPN transistor in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

PBSS4140T

Rev F Apr.-2017

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Peak Collector Current

Peak Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICM

IBM

PC

Tj

Tstg

DATA SHEET

数值

Rating

40

40

5.0

1.0

2.0

1.0

300

150

-55～150

单位

Unit

V

V

V

A

A

A

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Output Capacitance

符号

Symbol

ICBO

ICEO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)(1)

VCE(sat)(2)

VCE(sat)(3)

VBE(sat)

VBE

fT

CC

测试条件

Test Conditions

VCB=40V IE=0

VCB=30V IE=0

VCE=5.0V IC=0

VCE=5.0V IC=500mA

VCE=5.0V IC=1.0mA

VCE=5.0V IC=1.0A

IC=100mA IB=1.0mA

IC=500mA IB=50mA

IC=1.0A

IB=100mA

IC=1.0A

IB=100mA

VCE=5.0V

VCE=10V

f=100MHz

VCB=10V

f=1.0MHz

IC=1.0A

IC=50mA

IE=0

最小值 典型值 最大值

Min Typ Max

0.1

0.1

0.1

300

900

300

200

200

250

500

1.2

1.1

150

10

单位

Unit

μA

μA

μA

mV

mV

mV

V

V

MHz

pF

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