NTD3055L104G Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
NTD3055L104G Datasheet PDF : 10 Pages
| |||
NTD3055L104, NTDV3055L104
TYPICAL CHARACTERISTICS
24
VGS = 10 V
5V
20
8V
16
6V
12
4.5 V
4V
8
3.5 V
4
3V
0
01
2
34
5
6
7
8
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
24
VDS ≥ 10 V
20
16
12
8
TJ = 25°C
4
TJ = 100°C
0
TJ = −55°C
1 1.5 2 2.5 3 3.5 4 4.5
5 5.5 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.32
0.28
VGS = 5 V
0.32
0.28
VGS = 10 V
0.24
0.24
TJ = 100°C
0.20
0.20
0.16
0.16
TJ = 25°C
0.12
0.12
0.08
TJ = −55°C
0.08
0.04
0.04
TJ = 100°C
TJ = 25°C
TJ = −55°C
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
1.8
ID = 6 A
VGS = 5 V
1.6
10,000
1000
VGS = 0 V
TJ = 150°C
1.4
100
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
TJ = 100°C
1
0
10
20
30
40
50
60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
www.onsemi.com
4
Share Link: 