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NTD3055L104G Просмотр технического описания (PDF) - ON Semiconductor

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NTD3055L104G Datasheet PDF : 10 Pages
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NTD3055L104, NTDV3055L104
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static DraintoSource OnResistance (Note 3)
(VGS = 5.0 Vdc, ID = 6.0 Adc)
Static DraintoSource OnVoltage (Note 3)
(VGS = 5.0 Vdc, ID = 12 Adc)
(VGS = 5.0 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
V(BR)DSS
Vdc
60
70
62.9
mV/°C
IDSS
mAdc
1.0
10
IGSS
±100
nAdc
VGS(th)
RDS(on)
VDS(on)
gFS
Vdc
1.0
1.6
2.0
4.2
mV/°C
mW
89
104
Vdc
0.98 1.50
0.86
9.1
mhos
Ciss
Coss
Crss
316
440
pF
105
150
35
70
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc, RG = 9.1 W) (Note 3)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 5.0 Vdc) (Note 3)
td(on)
tr
td(off)
tf
QT
Q1
Q2
9.2
20
ns
104
210
19
40
40.5
80
7.4
20
nC
2.0
4.0
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 12 Adc, VGS = 0 Vdc) (Note 3)
VSD
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
0.95
1.2
Vdc
0.82
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
trr
ta
tb
QRR
35
ns
21
14
0.04
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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