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NE325S01-T1B Просмотр технического описания (PDF) - California Eastern Laboratories.

Номер в каталоге
Компоненты Описание
производитель
NE325S01-T1B
CEL
California Eastern Laboratories. CEL
NE325S01-T1B Datasheet PDF : 5 Pages
1 2 3 4 5
NE325S01
NONLINEAR MODEL
SCHEMATIC
GATE
CGD_PKG
0.001pF
Ldx
Lgx
Rgx 0.69nH
6 ohms
CGS_PKG
0.07pF
Q1 0.6nH Rdx
6 ohms
Lsx
0.07nH
Rsx
0.06 ohms
DRAIN
CDS_PKG
0.05PF
FET NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
VTO
-0.8
RG
3
VTOSC
0
RD
2
ALPHA
8
RS
2
BETA
0.103
RGMET
0
GAMMA
0.092
KF
0
GAMMADC
0.08
AF
1
Q
2
TNOM
27
DELTA
1
XTI
3
VBI
0.715
EG
1.43
IS
3e-13
VTOTC
0
N
1.22
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
4e-12
CDS
0.13e-12
RDB
5000
CBS
1e-9
CGSO
0.3e-12
CGDO
0.02e-12
DELTA1
0.3
DELTA2
0.1
FC
0.5
VBR
Infinity
(1) Series IV Libra TOM Model
SOURCE
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
Date:
VDS = 1 V to 3 V, ID = 5 mA to 30 mA
IDSS = 59.9 ma @ VGS = 0, VDS = 2 V
2/98

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