NDS352AP Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

NDS352AP

P-Channel MOSFET

KEXIN Industrial 

SMD Type

MOSFET

P-Channel MOSFET

NDS352AP (KDS352AP)

■ Typical Characterisitics

1.1

1.08

1.06

ID = - 2 5 0 µ A

1.04

1.02

1

0.98

0.96

0.94

-50

-25

0

25

50

75

100

125

150

TJ , JUNCTION TEMPERATURE (°C)

4

VGS = 0V

1

0.1

0.01

TJ = 125°C

25°C

-55°C

0.001

0.0001

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation with

Temperature.

Figure 8. Body Diode Forward Voltage Variation with

Source Current and Temperature.

400

300

200

Ciss

100

Coss

50

30

20

0 .1

f = 1 MHz

VGS = 0 V

Crss

0 .2

0 .5

1

2

5

10

-VDS , DRAIN TO SOURCE VOLTAGE (V)

20 30

Figure 9. Capacitance Characteristics..

10

ID = -0.9A

8

VDS= -5V -10

-15

6

4

2

0

0

1

2

3

4

5

Qg , GATE CHARGE (nC)

Figure 10. Gate Charge Characteristics.

VIN

VGS

RGEN

G

VDD

RL

D

V OUT

DUT

S

t d(on)

ton

tr

90%

td(off)

toff

tf

90%

VO U T

VIN

10%

10%

50%

10%

90%

50%

PULSE WIDTH

INVERTED

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

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