NDS351AN Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDS351AN Datasheet PDF : 6 Pages
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Typical Electrical Characteristics (continued)
1.12
1.08
I D = 250µA
1.04
1
0.96
0.92
-50
-25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 7. Breakdown Voltage Variation with
Temperature.
5
V GS = 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
400
300
200
150
100
80 f = 1 MHz
VGS = 0V
C iss
C oss
C rss
50
0.1
0.2
0.5
1
2
5
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
ID = 1.2A
8
6
VDS = 5V
10V
15V
4
2
0
0
1
2
3
4
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VGS
RGEN
G
VDD
RL
D
VOUT
DUT
S
t d(on)
t on
tr
90%
td(off)
toff
tf
90%
VO U T
VIN
10%
10%
50%
10%
90%
INVERTED
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDS351AN Rev. C
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