NDS351AN Просмотр технического описания (PDF) - Fairchild Semiconductor
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NDS351AN Datasheet PDF : 6 Pages
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Typical Electrical Characteristics
5
V GS =10V 6.0 5.0
4.5
4
4.0
3
3.5
2
3.0
1
0
0
1
2
3
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.8
ID = 1.2A
1.6 VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
5
V DS = 5.0V
4
3
T = -55°C
J
25°C
125°C
2
1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
1.8
1.6
VGS = 3.5V
1.4
1.2
4.0
1
4.5
5.0
0.8
6.0
7.0
0.6
10
0.4
0
1
2
3
4
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.8
1.6 VGS = 4.5 V
1.4
TJ = 125°C
1.2
25°C
1
-55°C
0.8
0.6
0.4
0
1
2
3
4
I D, DRAIN CURRENT (A)
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
1.2
1.1
1
0.9
0.8
0.7
0.6
-50
-25
VDS= V GS
I D = 250µA
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation
with Temperature.
NDS351AN Rev. C
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