MMDT5401 Просмотр технического описания (PDF) - LiteOn Technology

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производитель

MMDT5401

PNP/PNP Multi-Chip Transistor

LiteOn Technology 

PNP/PNP Multi-Chip Transistor

MMDT5401

FEATURES

• Ideal for Medium Power Amplification and Switching

• Complementary NPN Type Available(MMDT 5551)

MECHANICAL DATA

• Case: SOT-363 Plastic

• Case material: “Green” molding compound, UL

flammability classification 94V-0, (No Br. Sb. CI)

• Lead Free in RoHS 2002/95/EC Compliant

Maximum Ratings @ TA = 25℃

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Electrical Characteristics @ TA = 25℃ unless otherwise specified

Characteristic

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cut-off current

Emitter-base cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise Figure

Test Condition

IC=-100µA,IE=0

IC=-1mA,IB=0

IE=-10µA,IC=0

VCB=-120V,IE=0

VEB=-3V,IC=0

VCE=-5V,IC=-1mA

VCE=-5V,IC=-10mA

VCE=-5V,IC=-50mA

IC=-10mA,IB=-1mA

IC=-50mA,IB=-5mA

IC=-10mA,IB=-1mA

IC=-50mA,IB=-5mA

VCE=-10V,IC=-0mA,

f=100MHz

VCB=-10V,IE=0,f=1MHz

VCE= -5.0V, IC= -200µA,

RS= 10Ω,f = 1.0kHz

Symbol

VCBO

VCEO

VEBO

ICBO

IEBO

hFE1

hFE2

hFE3

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

fT

Cob

NF

Value

Unit

-160

V

-150

V

-5

V

-200

mA

200

mW

150

℃

-55~+150

℃

Min.

-160

-150

-5

50

100

50

100

Typ.

Max.

Unit

V

V

V

-0.05

uA

-0.05

uA

300

-0.2

V

-0.5

V

-1

V

-1

V

MHz

6

pF

8

dB

REV. 3, Jan-2013, KSTR08

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