MMBF170L Просмотр технического описания (PDF) - ON Semiconductor
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MMBF170L Datasheet PDF : 5 Pages
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MMBF170L, NVBF170L
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
V(BR)DSS
IGSS
60
−
Vdc
−
10
nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA)
On−State Drain Current (VDS = 25 Vdc, VGS = 0)
DYNAMIC CHARACTERISTICS
VGS(th)
rDS(on)
ID(off)
0.8
3.0
Vdc
−
5.0
W
−
0.5
mA
Input Capacitance
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
Ciss
−
60
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W)
Figure 1
td(on)
td(off)
−
10
ns
−
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping†
MMBF170LT1G
SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
MMBF170LT3G
SOT−23 (TO−236)
(Pb−Free)
10000 / Tape & Reel
NVBF170LT1G*
SOT−23 (TO−236)
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
PULSE
GENERATOR
50 W
125 W
Vin
40 pF
50 W 1 MW
20 dB 50 W
ATTENUATOR
TO SAMPLING
SCOPE
50 W INPUT
Vout
ton
td(on)
OUTPUT
INVERTED
Vout
INPUT
Vin 10%
(Vin AMPLITUDE 10 VOLTS)
tr
td(off)
90%
10%
50%
PULSE WIDTH
toff
tf
90%
90%
50%
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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