MMBF170L Просмотр технического описания (PDF) - ON Semiconductor
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MMBF170L Datasheet PDF : 5 Pages
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MMBF170L, NVBF170L
Power MOSFET
500 mA, 60 V, N−Channel SOT−23
Features
• NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Drain Current − Continuous
− Pulsed
THERMAL CHARACTERISTICS
VDSS
60
Vdc
VDGS
60
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
ID
0.5
Adc
IDM
0.8
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
556
−55 to
+150
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
www.onsemi.com
500 mA, 60 V
RDS(on) = 5 W
SOT−23
CASE 318
STYLE 21
N−Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
3
Drain
6Z MG
G
Gate 1
2 Source
6Z
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 10
Publication Order Number:
MMBF170LT1/D
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