MMBTA43 Просмотр технического описания (PDF) - TY Semiconductor

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производитель

MMBTA43

High Voltage Transistors

TY Semiconductor 

Product specification

MMBTA43

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Collector-emitter breakdown voltage *

V(BR)CEO IC = 1.0 mA, IB = 0

Collector-base breakdown voltage

V(BR)CBO IC = 100 ìA, IE = 0

Emitter-base breakdown voltage

V(BR)EBO IE = 100 ìA, IC = 0

Collector cutoff current

ICBO VCB = 160 V, IE = 0

Emitter cutoff current

IEBO VEB = 4.0 V, IC = 0

IC = 1.0 mA, VCE = 10 V

DC current gain *

hFE IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

Collector-emitter saturation voltage *

VCE(sat) IC = 20 mA, IB = 2.0 mA

Base-emitter saturation voltage *

VBE(sat) IC = 20 mA, IB = 2.0 mA

Current-gain - bandwidth product

fT IC = 10 mA, VCE = 20 V, f = 100 MHz

Collector-base capacitance

Ccb VCB = 20 V, IE = 0, f = 1.0 MHz

* Pulse Test: Pulse Width 300 ìs, Duty Cycle 2.0%.

Min Typ Max Unit

200

V

200

V

6

V

0.1 ìA

0.1 ìA

25

40

40

0.5 V

0.9 V

50

MHz

4 pF

Marking

Marking

M1E

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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