MJ13334 Просмотр технического описания (PDF) - New Jersey Semiconductor
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MJ13334 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
MJ13334
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=100mA; IB=0
450
Vc£(sat)-1 Collector-Emitter Saturation Voltage
lc= 10A; IB=2A
lc=10A;lB=2A,Tc=100'C
VcE(sat)-2
Ve£(sat)
ICEV
ICER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
lc= 20A; IB=6.7A
lc= 10A; IB=2A
lc=10A;lB=2A,Tc=100-C
VCEv=450V;VBE(off)=1.5V
VCEv=450V;VBE(off)=1 .5V;TC=150'C
VCE= 450V; RBE= 50 Q ,TC= 1 00"C
V
1.8
2.4
V
5
V
1.8
1.8
V
0.25
5.0
mA
5.0 mA
IEBO
Emitter Cutoff Current
VEB= 6V; lc=0
1
mA
hFE
DC Current Gain
lc= 5A ; VCE= 5V
10
60
fr
Current Gain-Bandwidth Product
lc= 0.3A ;VGE= 10V; ftest=1MHz
5
40 MHz
COB
Output Capacitance
lE=0;VcB=10V;ftest=1kHz
125
500 PF
Switching times;Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
lc=10A, VCC=250V; IB1=2A
Duty CyclesS2.0%
0.02 0.1 u s
0.3
0.7
l-i S
1.6 4.0 V S
0.3 0.7 \i S
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