TSSS2600 Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
TSSS2600 Datasheet PDF : 5 Pages
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www.vishay.com
TSSS2600
Vishay Semiconductors
250
200
150
RthJA
100
50
0
0
94 8029
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
125
100
75
RthJA
50
25
0
0
94 7916
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of VF
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 μs
IF = 100 mA
VF
VF
TKVF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
1
IF = 1.5 A, tp = 100 μs
Ie
IF = 100 mA, tp = 20 ms
φe
IF = 100 mA
TKφe
horizontal
ϕ1
vertical
ϕ2
IF = 100 mA
λp
IF = 100 mA
Δλ
IF = 100 mA
TKλp
IF = 100 mA
tr
IF = 1.5 A
tr
IF = 100 mA
tf
IF = 1.5 A
tf
Virtual source diameter
d
TYP.
1.25
2.2
- 1.3
30
2.6
25
20
- 0.8
± 25
± 60
950
50
0.2
800
400
800
400
2
MAX.
1.6
100
3
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Rev. 1.7, 24-Aug-11
2
Document Number: 81042
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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