HYB514171BJ-50 Просмотр технического описания (PDF) - Siemens AG
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HYB514171BJ-50 Datasheet PDF : 23 Pages
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HYB 514171BJ-50/-60
256k × 16 DRAM
AC Characteristics (cont’d) 5, 6
TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Column address to RAS lead time
Read command setup time
Read command hold time
Read command hold time ref. to RAS
CAS to output in low-Z
Output buffer turn-off delay from CAS
Output buffer turn-off delay from OE
Data to OE low delay
CAS high to data delay
OE high to data delay
tRAL
tRCS
tRCH
tRRH
tCLZ
tOFF
tOEZ
tDZO
tCDD
tODD
25 –
30 –
ns
0
–
0
–
ns
0
–
0
–
ns 11
0
–
0
–
ns 11
0
–
0
–
ns 8
0
15 0
20 ns 12
0
15 0
20 ns 12
0
–
0
–
ns 13
15 –
20 –
ns 14
15 -
20 –
ns 14
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
Data to CAS low delay
tWCH
tWP
tWCS
tRWL
tCWL
tDS
tDH
tDZC
10 –
10 –
0
–
15 –
15 –
0
–
10 –
0
–
10 –
10 –
0
–
15 –
15 –
0
–
15 –
0
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
tRWC
tRWD
tCWD
tAWD
tOEH
140 –
75 –
40 –
50 –
15 –
160 –
90 –
45 –
60 –
20 –
ns
ns 15
ns 15
ns 15
ns
Fast Page Mode Cycle
Fast page mode cycle time
tPC
35 –
40 –
ns
Semiconductor Group
7
1998-10-01
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