HYB514171BJ-50- Просмотр технического описания (PDF) - Siemens AG
Номер в каталоге
Компоненты Описание
производитель
HYB514171BJ-50- Datasheet PDF : 23 Pages
| |||
HYB 514171BJ-50/-60
256k × 16 DRAM
Capacitance
TA = 0 to 70 °C; VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A8)
CI1
–
6
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2
–
7
pF
Output capacitance (l/O1 to l/O16)
CIO
–
7
pF
AC Characteristics 5, 6
TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
OE access time
tRC
95 –
110 –
ns
tRP
35 –
40 –
ns
tRAS
50 10k 60 10k ns
tCAS
15 10k 15 10k ns
tASR
0
–
0
–
ns
tRAH
10 –
10 –
ns
tASC
0
–
0
–
ns
tCAH
10 –
15 –
ns
tRCD
20 35 20 45 ns
tRAD
15 25 15 30 ns
tRSH
15 –
15 –
ns
tCSH
50 –
60 –
ns
tCRP
5
–
5
–
ns
tT
3
50 3
50 ns 7
tREF
–
16 –
16 ms
tRAC
–
50 –
60
ns 8, 9
tCAC
–
15 –
15
ns 8, 9
tAA
–
25 –
30
ns 8, 10
tOEA
–
15 –
15 ns
Semiconductor Group
6
1998-10-01
Share Link: 