HYB514171BJ-60 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

HYB514171BJ-60

256k × 16-Bit Dynamic RAM

Infineon Technologies 

HYB 514171BJ-50/-60

256k × 16 DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 %, tT = 5 ns

Parameter

Symbol

Limit Values

Unit Note

-50

-60

min. max. min. max.

CAS precharge time

Access time from CAS precharge

RAS pulse width

RAS hold time from CAS precharge

tCP

10 –

10 –

ns

tCPA

–

30 –

35 ns 7

tRASP

50 200k 60 200k ns

tRHCP

30

–

35 –

ns

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read/write cycle time

CAS precharge to WE delay time

tPRWC

80

–

90 –

ns

tCPWD

55

–

60 –

ns

CAS-before-RAS Refresh Cycle

CAS setup time

CAS hold tim

RAS to CAS precharge time

Write to RAS precharge time

Write to RAS hold time

tCSR

5

–

5

–

ns

tCHR

10 –

10 –

ns

tRPC

0

–

0

–

ns

tWRP

10 –

10 –

ns

tWRH

10 –

10 –

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

25 –

30 –

ns

Semiconductor Group

8

1998-10-01

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