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Компоненты Описание
G15T60(2006) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
G15T60
(Rev.:2006)
Low Loss IGBT in TrenchStop® and Fieldstop technology
Infineon Technologies
G15T60 Datasheet PDF : 12 Pages
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TrenchStop
®
Series
IGP15N60T
q
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0 /15V,
R
G
=15
Ω
,
L
σ
1)
=154nH,
C
σ
1)
=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
17
11
188
50
0.22
0.35
0.57
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=175
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
= 15
Ω
L
σ
1)
=154nH,
C
σ
1)
=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
17
15
212
79
0.34
0.47
0.81
Unit
max.
- ns
-
-
-
- mJ
-
-
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.1 June 06
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