FSA1208 Просмотр технического описания (PDF) - ON Semiconductor

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FSA1208

Low-Power, Eight-Port, High-Speed Isolation Switch

ON Semiconductor 

DC Electrical Characteristics

All typical values are at 25°C unless otherw ise specified.

Symbol

Parameter

V IK

Clamp Diode Voltage

V IH

Input Voltage High

Conditions

IIN=-18 mA

V IL

Input Voltage Low

IIN

Control Input Leakage

IOZ

Off State Leakage

RON

Sw itch On Resistance(3)

ICC

Quiescent Supply Current

VSW=0 to VCC

0 A, B 3.6 V

VSW=0 V, ION=-10 mA

Figure 3

VSW=1.8 V, ION=-10 mA

Figure 3

VIN=0 or VCC, IOUT=0

TA=- 40ºC to +85ºC

VCC (V) Min. Typ. Max. Units

2.5

2.3 to 3.6 1.3

4.3

1.7

2.3 to 3.6

4.3

-1.2

V

V

V

0.5

V

0.7

V

4.3

-1

1

µA

4.3

-2

2

µA

2.5

7



2.5

15



4.3

1

µA

ICCT

Increase in ICC Current Per

Control Voltage and VCC

VIN=1.8 V

2.7

10

µA

Note :

3. Measured by the voltage drop betw een A and B pins at the indicated current through the sw itch.

On resistance is determined by the low er of the voltage on the tw o (A or B ports).

AC Electrical Characteristics

All typical values are for VCC=2.5 V at 25°C unless otherw ise specified.

Symbol

Parameter

Conditions

ton

Turn-On Time, /OE to Output

tuff

Turn-Off Time, /OE to Output

tad

Propagation Delay(4)

OIRR

Xtalk

Off Isolation

Non-Adjacent Channel

Crosstalk

BW -3dB Bandw idth

Note :

4. Guaranteed by characterization.

RL=50 Ω, CL=5 pF

VSW=1.8 V

Figure 4, Figure 5

RL=50 Ω, CL=5 pF

VSW=1.8 V

Figure 4, Figure 5

RL=50 Ω, CL=5 pF

Figure 4, Figure 6

RL=50 Ω, f=400 MHz

Figure 11

RL=50 Ω, f=100 MHz

Figure 12

RL=50 Ω, CL=0 pF

Figure 10

RL=50 Ω, CL=5 pF

Figure 10

VCC (V)

2.3 to 3.6

2.3 to 3.6

3.3

2.3 to 3.6

2.3 to 3.6

2.3 to 3.6

TA=- 40ºC to +85ºC

Min. Typ. Max.

15

34

12

25

0.35

-40

-40

1000

750

Units

ns

ns

ns

dB

dB

MHz

MHz

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