FZT558(1995) Просмотр технического описания (PDF) - Diodes Incorporated.

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Компоненты Описание

производитель

FZT558
(Rev.:1995)

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

Diodes Incorporated. 

FZT558

TYPICAL CHARACTERISTICS

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.001

IC/IB=10

IC/IB=20

IC/IB=50

0.01

0.1

1

I+ - Collector Current (Amps)

VCE(sat) v IC

10 20

-55°C

+25°C

1.6

+100°C

+175°C

1.4

1.2

IC/IB=10

1.0

0.8

0.6

0.4

0.2

0

0.001

0.01

0.1

1

I+ - Collector Current (Amps)

10 20

VCE(sat) v IC

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.001

+100°C

+25°C

-55°C

VCE=10V

300

200

100

0.01

0.1

1

I+ - Collector Current (Amps)

hFE v IC

10 20

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.001

-55°C

+25°C

+100°C

+175°C

IC/IB=10

0.01

0.1

1

I+ - Collector Current (Amps)

VBE(sat) v IC

10 20

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.001

-55°C

+25°C

+100°C

+175°C

0.01

0.1

VCE=10V

1

10 20

I+ - Collector Current (Amps)

VBE(on) v IC

3 - 193

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