FR1Q Просмотр технического описания (PDF) - Microsemi Corporation
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производитель
FR1Q Datasheet PDF : 3 Pages
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21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
FR1Q
Thru
FR1ZZ
Features
• For Surface Mount Applications
• Extremely Low Thermal Resistance
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Fast Recovery Times For High Efficiency
• Gull Wing Lead Bend To Prevent Arcing
• Perfect For Ballast, Television And Monitor Applications
Maximum Ratings
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50°C to +150°C
• Maximum Thermal Resistance; 15°C/W Junction To Lead
Microsemi
Part
Number
FR1Q
FR1V
FR1Y
FR1Z
FR1ZZ
Device
Marking
FR1Q
FR1V
FR1Y
FR1Z
FR1ZZ
Maximum
Recurrent
Peak Reverse
Voltage
1200V
1400V
1600V
1800V
2000V
Maximum
RMS
Voltage
840V
980V
1120V
1260V
1400V
Maximum
DC
Blocking
Voltage
1200V
1400V
1600V
1800V
2000V
lectrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A TJ = 55°C
Peak Forward Surge
IFSM
Current
30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
FR1Q-FR1Y
VF
FR1Z-FR1ZZ
1.35V IFM = 1.0A;
1.50V TJ = 25°C*
Maximum DC
Reverse Current At
IR
5µA TJ = 25°C
Rated DC Blocking
30µA TJ = 125°C
Voltage
Maximum Reverse
Recovery Time
FR1Q-FR1Y
Trr
FR1Z-FR1ZZ
300ns IF=0.5A, IR=1.0A,
500ns Irr=0.25A
Typical Junction
Capacitance
CJ
45pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
1 Amp Fast Recovery
Silicon Rectifier
1200 to 2000 Volts
DO-215AA
H (SMBG)
Cathode Band
J
A
C
E
F
D
B
G
INCHES
DIM
MIN
A
.075
B
.081
C
.004
D
---
E
.015
F
.065
G
.235
H
.160
J
.130
DIMENSIONS
MAX
.095
.087
.008
.02
.03
.084
.255
.180
.155
MM
MIN
1.90
2.06
.10
---
.38
1.65
5.97
4.06
3.30
MAX
2.42
2.21
.20
.51
.76
2.13
6.48
4.57
3.94
SUGGESTED SOLDER
PAD LAYOUT
0.175
NOTE
0.095
0.075”
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