FQD17P06(2001) Просмотр технического описания (PDF) - Fairchild Semiconductor
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Компоненты Описание
производитель
FQD17P06 Datasheet PDF : 9 Pages
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Typical Characteristics
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
101
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.40
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
V = - 10V
GS
V = - 20V
GS
※ Note : TJ = 25℃
10
20
30
40
50
60
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150℃
100
25℃
10-1
2
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8
VDS = -48V
6
4
2
※ Note : ID = -17 A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001
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