FMBT3906DW1 Просмотр технического описания (PDF) - Formosa Technology

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производитель

FMBT3906DW1

Dual PNP Epitaxial Planar Transistor

Formosa Technology 

Dual PNP Epitaxial Planar Transistor

FMBT3906DW1

Formosa MS

Characteristics (AT TA=25oC unless otherwise noted)

Off characteristics

PARAMETER

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage(3)

Emitter-Base breakdown voltage

Base cutoff current

Collector cutoff current

CONDITIONS

Ic = -10uA, IE = 0

Ic = -1mA, IB = 0

Ic = -10uA, IC = 0

VCE = -30Vdc, VEB = -3.0Vdc

VCE = -30Vdc, VEB = -3.0Vdc

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

IBL

ICEX

MIN.

-40

-40

-5.0

TYP. MAX. UNIT

V

V

V

-50

nA

-50

On characteristics(3)

PARAMETER

CONDITIONS

Ic = -0.1mA, VCE = -1.0V

Ic = -1.0mA, VCE = -1.0V

DC current gain

Ic = -10mA, VCE = -1.0V

Ic = -50mA, VCE = -1.0V

Ic = -100mA, VCE = -1.0V

Collector-Emitter saturation voltage(3)

Ic = -10mA, IB = -1.0mA

Ic = -50mA, IB = -5.0mA

Base-Emitter saturation voltage(3)

Ic = -10mA, IB = -1.0mA

Ic = -50mA, IB = -5.0mA

3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.

Symbol MIN. TYP. MAX. UNIT

60

80

hFE

100

300 -

60

30

VCE(sat)

-0.25

Vdc

-0.40

-0.65

VBE(sat)

-0.85

Vdc

-0.95

Small-signal characteristics

PARAMETER

CONDITIONS

Symbol

Current-gain-bandwidth product(4) IC = -10mA, VCE = -20V, f = 100MHz

fT

Output capacitance

VCB = -5.0V, IE = 0, f = 1.0MHz

Cobo

Input capacitance

VEB = -0.5V, IC = 0, f = 1.0MHz

Cibo

Input impedance

VCE = -10A, IC = -1.0mA, f = 1.0KHz

hie

Voltage feeback radio

VCE = -10V, IC = -1.0mA, f = 1.0KHz

hre

Small-signal current gain

VCE = -10V, IC = -1.0mA, f = 1.0KHz

hfe

Output admittance

VCE = -10V, IC = -1.0mA, f = 1.0KHz

hoe

Noise figure

VCE = -5.0V, IC = -100uA, RS = 1.0K ohms, f = 1.0KHZ NF

4.fT is defined as the frequency at which hfe extrapolates to unity.

MIN.

250

2.0

0.1

100

3.0

TYP. MAX. UNIT

MHz

4.5 VpFdc

1.0 pF

12

10.0

400

60

4.0

kVohdmc s

X 10-4

-

umhos

dB

Switching characteristics

PARAMETER

Delay time

Rise time

CONDITIONS

VCC = -3.0V, VBE = 0.5V, IC = -10mA, IB1 = -1.0mA

Storage time

Fall time

VCC = -3.0V, IC =-10mA, IB1 = IB2 = -1.0mA

5. Pulse Test: Pulse Width <=300µs, Duty cycle«=2.0%

Symbol MIN. TYP. MAX. UNIT

td

35

tr

35

ns

ts

225

tf

75

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Page 3

Document ID Issued Date

DS-231113

2008/02/10

Revised Date Revision

2010/03/10

B

Page.

10

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