ZTX458 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

ZTX458

Silicon NPN transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

ZTX458

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

400

400

5.0

300

1.0

150

-55～150

单位

Unit

V

V

V

mA

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage*

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation

Voltage

Base -Emitter Saturation Voltage

Base -Emitter Voltage

Transition Frequency

Output Capacitance

*:脉冲测试/pulse test.

符号

Symbol

VCBO

测试条件

Test Conditions

IC=100μA IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

400

V

*VCEO IC=10mA IB=0

400

V

VEBO IE=100μA IC=0

5.0

ICBO VCB=320V IE=0

ICEO VCE=320V IB=0

IEBO VEB=4.0V IC=0

hFE(1) VCE=10V IC=50mA

100

hFE(2) VCE=10V IC=1.0mA 100

*hFE(3) VCE=10V IC=100mA 15

VCE(sat)(1) IC=20mA

IB=2.0mA

VCE(sat)(2) IC=50mA

IB=6.0mA

VBE(sat) IC=50mA IB=5.0mA

VBE VCE=10V IC=50mA

fT

VCE=20V

f=20MHz

IC=10mA

50

Cobo VCB=20V f=1.0MHz

V

0.1 μA

0.1 μA

0.1 μA

300

0.2 V

0.5 V

0.9 V

0.9 V

MHz

5.0 pF

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