DTA124TH Просмотр технического описания (PDF) - ROHM Semiconductor
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DTA124TH Datasheet PDF : 2 Pages
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Transistors
DTA124TH / DTA124TE / DTA124TUA /
DTA124TKA / DTA124TSA
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
H
Limits(DTA124T )
Unit
E
UA KA SA
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
PC
150
200
300 mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55~+150
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50
-
-
V IC=−50µA
Collector-emitter breakdown voltage BVCEO −50
-
-
V IC=−1mA
Emitter-base breakdown voltage
BVEBO −5
-
-
V IE=−50µA
Collector cutoff current
ICBO
-
-
−0.5 µA VCB=−50V
Emitter cutoff current
IEBO
-
-
−0.5 µA VEB=−4V
Collector-emitter saturation voltage VCE(sat) -
-
−0.3 V IC/IB=−5mA/−0.5mA
DC current transfer ratio
hFE
100 250 600
-
VCE=−5V, IC=−1mA
Input resistance
R1
15.4 22 28.6 kΩ
-
Transition frequency
∗ Transition frequency of the device
fT
-
250
-
MHz VCE=−10V, IE=5mA, f=100MHz ∗
!Packaging specifications
Package
EMT3H
Package type
Taping
Code
T2L
Part No.
Basic ordering
unit (pieces)
8000
DTA124TH
DTA124TE
-
DTA124TUA
-
DTA124TKA
-
DTA124TSA
-
EMT3
Taping
TL
3000
-
-
-
-
UMT3
Taping
T106
3000
-
-
-
-
SMT3
Taping
T146
3000
-
-
-
-
SPT
Taping
TP
5000
-
-
-
-
!Electrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100˚C
50
25˚C
−40˚C
20
10
5
2
1
-100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m
COLLECTOR URRENT : IC (A)
Fig.1 DC current gain vs. collector current
-1
-500m
IC/IB=10
-200m
-100m
-50m
-20m
-10m
-5m
Ta=100˚C
25˚C
−40˚C
-2m
-1m
-10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
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