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DTC123EETL Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель
DTC123EETL Datasheet PDF : 12 Pages
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DTC123E series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
DTC123EM
Power dissipation
DTC123EE
DTC123EUA
DTC123EKA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
Values
Unit
VCC
50
V
VIN
-10 to 12
V
IO
100
mA
IC(MAX)*1
100
mA
150
150
PD*2
mW
200
200
Tj
150
Tstg
-55 to +150
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 20mA
IO = 10mA, II = 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 20mA
-
-
f
*1
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
Values
Unit
Min. Typ. Max.
-
- 0.5
V
3.0 -
-
- 100 300 mV
-
- 3.8 mA
-
- 500 nA
20 -
-
-
1.54 2.2 2.86 kΩ
0.8 1.0 1.2 -
- 250 - MHz
                                            
 
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