CY7C1061DV33(2006) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1061DV33 Datasheet PDF : 10 Pages
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PRELIMINARY
CY7C1061DV33
Document History Page
Document Title: CY7C1061DV33 16-Mbit (1M x 16) Static RAM
Document Number: 38-05476
REV.
Orig. of
ECN NO. Issue Date Change
Description of Change
**
201560 See ECN
SWI Advance Data sheet for C9 IPP
*A
233748 See ECN
RKF 1.AC, DC parameters are modified as per EROS (Spec # 01-2165)
2.Pb-free offering in the ‘ordering information’
*B
469420 See ECN
NXR Converted from Advance Information to Preliminary
Corrected typo in the Document Title
Removed –8 and –12 speed bins from product offering
Removed Commercial Operating Range
Changed 2G ball of FBGA and pin #40 of TSOPII from DNU to NC
Included the Maximum ratings for Static Discharge Voltage and Latch Up
Current on page #3
Changed ICC(Max) from 220 mA to 125 mA
Changed ISB1(Max) from 70 mA to 30 mA
Changed ISB2(Max) from 40 mA to 25 mA
Specified the Overshoot spec in footnote # 1.
Updated the Ordering Information Table
*C
499604 See ECN NXR Added note# 1 for NC pins
Updated Test Condition for ICC in DC Electrical Characteristics table
Updated the 48-ball FBGA Package
Document #: 38-05476 Rev. *C
Page 10 of 10
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