DB3 Просмотр технического описания (PDF) - Yangzhou yangjie electronic co., Ltd
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Компоненты Описание
производитель
DB3 Datasheet PDF : 2 Pages
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■Mechanical data
●Case:DO-35 glass case
● Weight: Approx 0.13 gram
DB3&DC34&DB4&DB6
Silicon bidirectional diac
RoHS
COMPLIANT
■External and internal structure
■Absolute Ratings
Symbols
Parameters
PC
ITRM
TSTG/TJ
Power Disspation on printed
Circuit(L=10mm)
Repetitive Peak on-state Current
TA=50℃
tp=10us
f=100Hz
Storage and Operating Junction Temperature
Value
Units
DB3
DC34
DB4
DB6
150
mW
2.0
2.0
2.0
1.6
A
-40 to+125/-40 to +110
℃
■Electrical Characteristics
Symbol
s
Parameters
Test Condition
Value
DB3 DC34 DB4
VBO Break Voltage(Note 2)
C=22Nf(Note2)
See diagram1
Min
28
Typ
32
Max
36
I+VBOI-
I-VBOI
Breakover Voltage Symmetry
C=22Nf(Note2)
See diagram1
Max
I±△VI
Dynamic Breakover Voltage(Note1)
△I=(IBO to IF=10Ma)
See diagram1
Min
VO
Output Voltage (Note1)
See diagram2
Min
30
35
34
40
38
45
±3
5
5
IBO Breakover Current (Note1)
C=22Nf(Note2)
Max
100
Tr
Rise Time(Note1)
See diagram3
Typ
1.5
IB
Leakage Current(Note1)
VB=0.5 VBO max
See diagram1
Max
10
Units
DB6
56
60
V
70
±4
V
10
V
V
uA
uS
uA
S-S508
Rev. 1.0, 02-Jul-15
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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