CQY37N Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
CQY37N Datasheet PDF : 5 Pages
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Infrared Emitting Diode, 950 nm,
GaAs
CQY37N
Vishay Semiconductors
100
10
1
0.1
100
94 7920
101
102
103
104
IF – Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
100
10
1
0.1
1
13718
10
100
1000
IF - Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
0.8
0.4
0
- 10 0 10
50
100
140
94 7993
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
0.25
0
900
94 7994
IF = 100 mA
950
λ - Wavelength (nm)
1000
Fig. 8 - Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
94 7922
0.6 0.4 0.2
0 0.2
0.4 0.6
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81002
Rev. 1.7, 08-Mar-11
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
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