BY584 Просмотр технического описания (PDF) - Philips Electronics

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BY584

High-voltage soft-recovery rectifier

Philips Electronics 

Philips Semiconductors

High-voltage soft-recovery rectifier

Product specification

BY584

ELECTRICAL CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VF

forward voltage

IR

reverse current

Qr

recovery charge

IF = 100 mA; Tj = Tj max; see Fig.5

VR = VRWmax; Tj = Tj max

when switched from IF = 100 mA to

VR ≥ 100 V and dIF/dt = −200 mA/µs;

see Fig.7

tf

fall time

when switched from IF = 100 mA to

VR ≥ 100 V and dIF/dt = −200 mA/µs;

see Fig.7

trr

reverse recovery time when switched from IF = 100 mA to

VR ≥ 100 V and dIF/dt = −200 mA/µs;

see Fig.7

Cd

diode capacitance

VR = 0 V; f = 1 MHz

MIN.

−

−

−

100

−

−

TYP.

−

−

−

−

200

2

MAX.

8.5

3

1

UNIT

V

µA

nC

− ns

− ns

− pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE UNIT

Rth j-tp

Rth j-a

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

lead length = 10 mm

note 1

100

K/W

155

K/W

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.6.

For more information please refer to the “General Part of associated Handbook”.

1996 Sep 26

3

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