BD533 Просмотр технического описания (PDF) - STMicroelectronics
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BD533 Datasheet PDF : 4 Pages
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BD533 BD534 BD535 DB536 BD537 BD538
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.5
oC/W
70
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD533/534
for BD535/536
for BD537/538
VCB = 45 V
VCB = 60 V
VCB = 80 V
ICES Collector Cut-off
Current (VBE = 0)
for BD533/534
for BD535/536
for BD537/538
VCE = 45 V
VCE = 60 V
VCE = 80 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IC = 2 A
IC = 6 A
for BD533/534
for BD535/536
for BD537/538
IB = 0.2 A
IB = 0.6 A
VBE∗ Base-Emitter Voltage IC = 2 A
VCE = 2 V
hFE∗ DC Current Gain
IC = 10 mA
IC = 500 mA
IC = 2 A
VCE = 5 V
for BD533/534
for BD535/536
for BD537/538
VCE = 2 V
VCE = 2 V
for BD533/534
for BD535/536
for BD537/538
fT
Transition frequency IC = 500 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 1 V
Min. Typ.
45
60
80
0.8
20
20
15
40
25
25
15
3
12
Max.
100
100
100
100
100
100
1
0.8
1.5
Unit
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
MHz
2/4
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