BD236(V2) Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD236 Datasheet PDF : 2 Pages
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BD235/BD236/BD237/BD238
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
5
°c/w
ELECTRICAL CHARACTERISTICS (Tcase =25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO Collector Cut-off
Current (le = 0)
VCE = rated VCEO
VCE = rated VCEO TC = 150°C
IEBO Emitter Cut-off Current
(Ic = 0)
VcEO(sus)* Collector-Emitter
Sustaining Voltage
VEB = 5 V
lc = 100 mA
for BD235/BD236
for BD237/BD238
VcE(sat)* Collector-Emitter
Saturation Voltage
lc = 1 A IB = 0.1 A
VBE* Base-Emitter Voltage lc = 1 A VCE = 2 V
hFE* DC Current Gain
lc = 150mA
lc = 1 A
VCE= 2 V
VCE = 2 V
fi Transition frequency lc = 250mA
hpE1/hFE2* Matched Pairs
lc = 150mA
* Pulsed: Pulse duration = 300 us, duty cycle 1.5%
VCE = 10V
VCE = 2 V
Min. Typ. Max.
0.1
2
1
Unit
mA
mA
mA
60
V
80
V
0.6
V
1.3
V
40
25
3
MHz
1.6
SOT-32 (TO-12B) MECHANICAL DATA
mm
Inch
DIM.
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
C1
1.0
1.3
0039
0.050
D
154
16.0
O.EOS
0.629
e
2.2
0.067
83
4,15
4.65
0.163
0.183
F
3.8
0.1SO
G
3
3.2
0118
0.126
H
254
0.100
H2
2.15
0.084
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