BD236(V2) Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD236 Datasheet PDF : 2 Pages
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tSe-mi-Conduckoi £Pioductit {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD235/BD236
BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
INTERNAL SCHEMATIC DIAGRAM
CO (2)
CO (2)
0)
(0
SCOB810
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD235
BD237
PNP
BD236
BD238
VCBO Collector-Base Voltage (IE = 0)
60
100
V
VGER Collector-Base Voltage (RBE= 1 Kil)
60
100
V
VCEO Collector-Emitter Voltage (IB = 0)
60
80
V
VEBO Emitter-Base Voltage (Ic = 0)
5
V
Ic Collector Current
2
A
ICM Collector Peak Current
6
A
Ptot Total Dissipation at Tc = 25 °C
25
W
Tstg Storage Temperature
-65 to 1 50
°C
T] Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
150
°C
NJ Seini-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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