HSM124 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HSM124

Silicon Epitaxial Planar Diode for Switching

Hitachi -> Renesas Electronics 

HSM124S

Absolute Maximum Ratings*2 (Ta = 25°C)

Item

Peak reverse voltage

Reverse voltage

Peak forward current

Non-Repetitive peak forward surge current

Average forward current

Junction temperature

Storage temperature

Notes: 1. Within 1µs forward surge current.

2. Per one device

Symbol

VRM

VR

I FM

I FSM * 1

IO

Tj

Tstg

Value

Unit

80

V

85

V

300

mA

4

A

100

mA

125

°C

–55 to +125

°C

Electrical Characteristics* (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

VF1

VF2

VF3

Reverse current

IR

Capacitance

C

Reverse recovery time trr

Note: Per one device

—

—

1.0

V

IF = 10mA

—

—

1.0

IF = 50mA

—

—

1.2

IF = 100mA

—

—

0.01 µA

VR = 80V

—

—

4.0

pF

VR = 0V, f = 1MHz

—

—

100 ns

IF = 10mA, VR = 6V, RL = 50Ω

2

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