KSB596 Просмотр технического описания (PDF) - Fairchild Semiconductor
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KSB596 Datasheet PDF : 5 Pages
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KSB596
Power Amplifier Applications
• Complement to KSD526
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE (on)
fT
Cob
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
IC = - 50mA, IB = 0
IE = - 10mA, IC = 0
VCB = - 80V, IE = 0
VEB = - 5V, IC = 0
VCE = - 5V, IC = - 0.5A
VCE = - 5V, IC = - 3A
IC = - 3A, IB = - 0.3A
VCE = - 5V, IC = - 3A
VCE = - 5V, IC = - 0.5A
VCB = - 10V, IE = 0
f = 1MHz
Value
- 80
- 80
-5
-4
- 0.4
30
150
- 55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Min.
- 80
-5
40
15
3
Typ.
-1
-1
130
Max.
- 70
- 100
240
Units
V
V
µA
µA
- 1.7
- 1.5
V
V
MHz
pF
hFE Classification
Classification
hFE1
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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